IGBT缓冲吸收电容: SMJ-TE系列
产品特点：
1：迈拉胶带封装，阻燃树脂灌注；
2：镀锡铜线轴向引出；
3：耐压高，损耗(tgδ)小，温升低；
4：自感(ESL)小，等效串联电阻（ESR）小；
5：高脉冲电流，高dv/dt承受能力。
Introduction:
1: Mylar tape, Sealed with resin;
2: Axial leads with Tinned copper wire;
3: Resistance to high voltage, low tgδ,low temperaturerise;
4: Low ESL and ESR;
5: High pulse Current.
应用：
1：IGBT 缓冲吸收。
2：广泛应用于电力电子设备中开关器件关断时的尖峰电压，尖峰电流吸收保护。
Application
1: IGBT Snubber.
2: Widely used in power electronic equipmentwhen the peak voltage, peak current absorption protection.
性能参数/Technical data
工作温度范围/Operating temperature range | Max Operating temperature: + 85℃ Upper category temperature: +85℃ Lower category temperature: -40℃ |
容量范围/capacitance range | 0.1μF～5.6μF |
额定电压/ Rated voltage | 630V.DC～2000V.DC |
容量偏差/Cap.tol | ±5%(J) ;±10%(K) |
耐电压/Withstand voltage | 1.5Un DC/10S |
损耗角正切/Dissipation factor | tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz |
绝缘电阻/Insulation resistance | C≤0.33μF RS≥15000 MΩ (at20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(at20℃ 100V.DC 60S) |
耐脉冲电流冲击/Withstand strike current | 200V/μS～1500V/μS |
预期寿命/Life expectancy | 100000h(Un;Θhotspot≤85°C) |
引用标准/Reference standard | IEC61071;IEC 61881 |
外形图：
